Publications

2024

  1. Yao Yao, Daniel F. Fernandes, Tomas Kubart, Zhen Zhang, François Lefloch, Frédéric Gustavo, János L. Lábár, Béla Pécz , Shi-Li Zhang, ‘Investigation of superconductivity in ultrathin PtSi films formed by employing a novel self-alignment process’, the 31st Materials for Advanced Metallization (MAM) Conference, Milano

2023

  1. Yuan Zhu, Jia-sheng Liang, Xun Shi and Zhen Zhang, ‘Interface Resistance-Switching with Reduced Cyclic Variations for Reliable Neuromorphic Computing’, Journal of Physics D: Applied Physics, 57 (7), 075105, (2023).
  1. Yingtao Yu, Nicolas Gauthier, Daniel Primetzhofer and Zhen Zhang，’Shallow junction formation via lateral boron autodoping during rapid thermal process’, Journal of Physics D: Applied Physics, 56 (45), 45LT01, (2023).
  1. Robert Zando, Mauro Chinappi, Cristiano Giordani, Fabio Cecconi, and Zhen Zhang, ‘Surface-particle interactions control the escape time of a particle from a nanopore-gated nanocavity system: a coarse-grained simulation’, Nanoscale (2023), accepted.
  1. Fabrice Nemouchi, Francois Lefloch, Shi-Li Zhang and Zhen Zhang, ‘Method for producing a superconducting transistor’, Patent EP23305137.4 filed in France, Feb. 2nd, 2023
  1. Zhen Zhang, ‘A device, a system and a method for performing antibiotic susceptibility tests’, Patent 2350054-9 filed in Sweden, Jan. 23rd, 2023

2022

  1. Qitao Hu and Zhen Zhang, "FET gas sensor device", Patent 2251480-6 filed in Sweden on Dec. 16, 2022.
  1. Yuan Zhu, Jia-sheng Liang, Xun Shi & Zhen Zhang, "A full-inorganic flexible Ag2S memristor with interface resistance-switching for energy-efficient computing", ACS Applied Materials & Interfaces, (2022), DOI: 10.1021/acsami.2c11183.
  1. Qingyu Yang, Shiqi Yang, Pengfei Qiu, Liming Peng, Tian-Ran Wei, Zhen Zhang, Xun Shi, Lidong Chen, ‘Flexible thermoelectrics based on ductile semiconductors’, Science, 377, 854–858 (2022).
  1. Shuangshuang Zeng, Mauro Chinappi, Fabio Cecconi, Theo Odijk, Zhen Zhang, ‘DNA compaction and dynamic observation in a nanopore gated sub-attoliter silicon nanocavity’, Nanoscale (2022). DOI: 10.1039/d2nr02260e
  1. Quentin Palomar, Anna Svärd, Shuangshuang Zeng, Qitao Hu, Funing Liu, Daniel Aili, and Zhen Zhang, "Detection of Gingipain Activity Using Solid State Nanopore Sensors"，Sensors & Actuators: B. Chemical (2022), DOI: 10.1016/j.snb.2022.132209.
  1. Yingtao Yu, Zhen Zhang and Si Chen, ‘Analysis of Low Frequency Noise in Schottky Junction Trigate Silicon Nanowire FET on Bonded SOI Substrate’, IEEE Transactions on Electron Devices (2022), DOI: 10.1109/TED.2022.3180983.
  1. Shiyu Li; Shuangshuang Zeng; Chenyu Wen; Zhen Zhang; Klas Hjort; Shi-Li Zhang，"Docking and Activity of DNA Polymerase on Solid-State Nanopores", ACS sensors (2002), DOI: 10.1021/acssensors.2c00216.
  1. Yuan Zhu, Jia-sheng Liang, Vairavel Mathayan, Tomas Nyberg, Daniel Primetzhofer, Xun Shi & Zhen Zhang, "High performance full-inorganic flexible memristor with combined resistance-switching", ACS Applied Materials & Interfaces (2022), DOI:10.1021/acsami.2c02264.
  1. Philipp M. Wolf , Eduardo Pitthan, Zhen Zhang, Christian Lavoie, Tuan T. Tran, and Daniel Primetzhofer, "Direct Transition from Ultrathin Orthorhombic Dinickel Silicides to Epitaxial Nickel Disilicide Revealed by In-Situ Synthesis and Analysis", Small (2022), DOI: 10.1002/smll.202106093.
  1. Xingxing Xu, Si Chen, Yingtao Yu, Petra Virtanen, Jiyue Wu, Qitao Hu, Sanna Koskiniemi, Zhen Zhang, "All-electrical antibiotic susceptibility testing within 30 minutes using silicon nano transistors", Sensors & Actuators: B. Chemical (2022), DOI: 10.1016/j.snb.2022.131458

2021

  1. Qitao Hu, Si Chen, Paul Solomon, and Zhen Zhang, "Ion Sensing with Single Charge Resolution Using Sub-10 nm Electrical Double Layer Gated Silicon Nanowire Transistors", Science Advances (2021), DOI: 10.1126/sciadv.abj6711.
  1. Liming Peng, Shiqi Yang, Tian-Ran Wei, Pengfei Qiu, Jiong Yang, Zhen Zhang, Xun Shi, Lidong Chen, ‘Phase-modulated mechanical and thermoelectric properties of Ag2S1-xTex ductile semiconductors’, Journal of Materiomics (2021), DOI:10.1016/j.jmat.2021.11.007.
  1. Ngan Hoang Pham, Yao Yao, Chenyu Wen, Shiyu Li, Shuangshuang Zeng, Tomas Nyberg, Tuan Thien Tran, Daniel Primetzhofer, Zhen Zhang, and Shi-Li Zhang, "Self-Limited Formation of Bowl-Shape Nanopores for Directional DNA Translocation", ACS Nano (2021), DOI: 10.1021/acsnano.1c06321
  1. Philipp M. Wolf , Eduardo Pitthan, Zhen Zhang, Tuan T. Tran, and Daniel Primetzhofer, ‘Direct transition from ultrathin orthorhombic dinickel silicides to epitaxial nickel disilicide revealed by in-situ synthesis and analysis’, IBA&PIXE-SIMS, Oct. 2021
  1. Man Zhang, Yaqiong Wang, Jianguo Liu, Madasamy Thangamuthu, Yajun Yue, Zhongna Yan, Jingyu Feng, Dou Zhang, Hongtao Zhang, Shaoliang Guan, Maria-Magdalena Titirici, Isaac Abrahams, Junwang Tang, Zhen Zhang, Steve Dunn, Haixue Yan, ‘Facile one-step synthesis and enhanced photocatalytic activity of WC/ferroelectric nanocomposite’, Journal of Materials Chemistry A (2021), DOI: 10.1039/D1TA04131B
  1. Xingxing Xu, Yingtao Yu, Qitao Hu, Si Chen, Leif Nyholm, and Zhen Zhang ‘Redox Buffering Effects in Potentiometric Detection of DNA Using Thiol modified Gold Electrodes’, ACS sensors (2021), DOI: 10.1021/acssensors.0c02700
  1. Xingxing Xu, Yingtao Yu, Qitao Hu, Si Chen, Leif Nyholm, and Zhen Zhang, ‘Surface Redox Buffering Effects on FET Based DNA Sensors with a Gold Sensing Gate’, China Semiconductor Technology International Conference (CSTIC), March 15th, 2021, Shanghai, China. (Invited talk)
  1. Yingtao Yu, Si Chen, Qitao Hu, Paul Solomon, and Zhen Zhang, " Ultra-low noise Schottky junction tri-gate silicon nanowire FET on bonded silicon-on-insulator substrate", IEEE Electron Device Letters (2021), 10.1109/LED.2021.3057285.

2020

  1. Shiyu Li, Shuangshuang Zeng, Chenyu Wen, Zhen Zhang, Klas Hjort, Shi-Li Zhang, "Dynamics of DNA Clogging in Hafnium Oxide Nanopores", The Journal of Physical Chemistry B. (2020), DOI: 10.1021/acs.jpcb.0c07756.
  1. Zhuo-Zhi Zhang, Qitao Hu, Xiang-Xiang Song*, Yue Ying, Hai-Ou Li, Zhen Zhang*, and Guo-Ping Guo*, "A suspended silicon single-hole transistor as an extremely scaled gigahertz nanoelectromechanical beam resonator", Advanced Materials, (2020), DOI: 10.1002/adma.202005625, (Zhuo-Zhi Zhang and Qitao Hu contributed equally. Corresponding authors are marked with * )
  1. Qitao Hu, Si Chen, Zhenqiang Wang, and Zhen Zhang, ‘Improving Selectivity of Ion-Sensitive Membrane by Polyethylene Glycol Doping’, Sensors & Actuators: B. Chemical (2020), DOI: 10.1016/j.snb.2020.128955
  1. Tuan T. Tran , Christian Lavoie, Zhen Zhang, and Daniel Primetzhofer, ‘In-situ Nanoscale Characterization of Composition and Structure during Formation of Ultrathin Nickel Silicide’, Applied Surface Science, (2020), DOI:10.1016/j.apsusc.2020.147781
  1. Quentin Palomar, X. Xu, R. Selegård, D. Aili, and Z. Zhang, ‘Peptide Decorated Gold Nanoparticle/Carbon Nanotube Electrochemical Sensor for Ultrasensitive Detection of Matrix Metalloproteinase-7’, Sensors & Actuators: B. Chemical (2020), DOI: /10.1016/j.snb.2020.128789
  1. Yaqiong Wang, Jianguo Liu, Haibin Zhang, Feng Li, Chiao-Wei Tseng, Bin Yang, Gray Smith, Jiwei Zhai, Zhen Zhang, Steve Dunn, Haixue Yan, "Domain wall free polar structure enhanced photodegradation activity in nanoscale ferroelectric BaxSr1-xTiO3", Advanced Energy Materials (2020)， DOI: 10.1002/aenm.202001802
  1. Chen Li, Chenyu Wen, Ruixue Zeng, Shuangshuang Zeng, Zhi-Jun Qiu, Zhen Zhang, Shi-Li Zhang, Dongping Wu, ‘Rapid Four-Point Sweeping Method to Investigate Hysteresis of MoS2 FET’, IEEE Electron Device Letters, (2020), DOI: 10.1109/LED.2020.3008085.
  1. Jiasheng Liang, Pengfei Qiu, Yuan Zhu, Hui Huang, Zhiqiang Gao, Zhen Zhang, Xun Shi, and Lidong Chen ‘Crystalline structure dependent mechanical and thermoelectric performance in Ag2Se1-xSx system’, Research (2020), DOI: 10.34133/2020/6591981
  1. Jiyue Wu, Haibin Zhang, Chang-Hsun Huang, Chiao-Wei Tseng, Nan Meng, Vladimir Koval, Yi-Chia Chou, Zhen Zhang (corresponding author) and Haixue Yan, ‘Ultrahigh Field-Induced Strain in Lead-Free Ceramics’, Nano Energy, DOI: 10.1016/j.nanoen.2020.105037
  1. Quentin Palomar, XingXing Xu, Chantal Gondran, Michael Holzinger, Serge Cosnier and Zhen Zhang, ‘Selective sensing of recombinant viral dengue virus 2 NS1 based on Au nanoparticles decorated multiwalled carbon nanotubes composites’, Microchimica Acta (2020)，DOI: 10.1007/s00604-020-04339-y.
  1. Tuan Thien Tran, Lukas Jablonka, Christian Lavoie, Zhen Zhang, Daniel Primetzhofer, ‘In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering’, Scientific Reports (nature) DOI:10.1038/s41598-020-66464-1.
  1. Si Chen, Chao Luo, Yujing Zhang, Jun Xu, Qitao Hu, Zhen Zhang(corresponding author) and Guoping Guo, "Current gain enhancement for silicon-on-insulator lateral bipolar junction transistors operating at liquid-helium temperature", IEEE Electron Device Letters (2020), DOI: 10.1109/LED.2020.2985674.
  1. Shuangshuang Zeng, Shiyu Li, Johanna Utterström, Chenyu Wen, Robert Selegård, Shi-Li Zhang, Daniel Aili, and Zhen Zhang, "Mechanism and kinetics of lipid bilayer formation in solid-state nanopores", Langmuir (2020), DOI: 10.1021/acs.langmuir.9b03637.

2019

  1. Xingxing Xu, Asta Makaraviciute, Eldar Abdurakhmanov, Fredrik Wermeling, Shiyu Li, U. Helena Danielson, Leif Nyholm, and Zhen Zhang, ‘Estimating Detection Limits of Potentiometric DNA sensors Using Surface Plasmon Resonance Analyses’, ACS Sensors (2019), DOI: 10.1021/acssensors.9b02086.
  1. Shuangshuang Zeng, Chenyu Wen, Paul Solomon, Shi-Li Zhang & Zhen Zhang , ‘Rectification of protein translocation in truncated pyramidal nanopores’, Nature nanotechnology (2019), DOI: 10.1038/s41565-019-0549-0
  1. Qitao Hu, Si Chen, Shi-Li Zhang, Paul Solomon, and Zhen Zhang, "Effects of Substrate Bias on Low-Frequency Noise in Lateral Bipolar Transistors Fabricated on Silicon-on-Insulator Substrate", IEEE Electron Device Letters (2019), DOI: 10.1109/LED.2019.2953362
  1. Shuangshuang Zeng, Chenyu Wen, Shi-Li Zhang and Zhen Zhang, "A nanopore array of individual addressability enabled by integrating microfluidics and a multiplexer," IEEE Sensors Journal (2019), DOI: 10.1109/JSEN.2019.2947713
  1. Xi Chen, Si Chen, Paul M Solomon, Shili Zhang and Zhen Zhang, "Low Noise Schottky Junction Tri-gate Silicon Nanowire Field-effect Transistor for Charge Sensing", IEEE Transactions on Electron Devices, (2019), DOI: 10.1109/TED.2019.2930067
  1. Xi Chen, Si Chen, Paul M Solomon and Zhen Zhang, ‘Top-bottom gate coupling effect on low frequency noise in a Schottky junction gated silicon nanowire field-effect transistor’, IEEE Journal of the Electron Devices Society, (2019), DOI: 10.1109/JEDS.2019.2929163.
  1. Chiao-Wei Tseng, Chenyu Wen, Ding-Chi Huang, Chin-Hung Lai, Si Chen, Qitao Hu, Xi Chen, Xingxing Xu, Shi-Li Zhang, Yu-Tai Tao, and Zhen Zhang, ‘Synergy of ionic and dipolar effects by molecular design for pH sensing beyond the Nernstian limit’, Advanced Science (2019), DOI: 10.1002/advs.201901001.
  1. Xingxing Xu, Asta Makaraviciute, Shalen Kumar, Chenyu Wen, Martin Sjödin, Eldar Abdurakhmanov, U. Helena Danielson, Leif Nyholm, Zhen Zhang, ‘Structural Changes of Mercaptohexanol Self-assembled Monolayers on Gold and their Influence on Impedimetric Aptamer Sensors’, Anal. Chem. (2019). DOI: 10.1021/acs.analchem.9b03946.
  1. Chenyu Wen, Shuangshuang Zeng, Shiyu Li, Zhen Zhanga, Shi-Li Zhang, ‘On rectification of ionic current in nanopores’, Anal. Chem.，（2019），DOI: 10.1021/acs.analchem.9b03685.
  1. Tuan Thien Tran, Lukas Jablonka, Barbara Bruckner, Stefanie Rund, Dietmar Roth, Mauricio A. Sortica, Peter Bauer, Zhen Zhang, Daniel Primetzhofer, ‘Electronic interaction of slow hydrogen and helium ions with nickel-silicon systems’, Physical Review A, 100, 032705 (2019)
  1. Shuangshuang Zeng, Chenyu Wen, Shiyu Li, Xi Chen, Si Chen, Shi-Li Zhang and Zhen Zhang, "Controlled size reduction and its underlying mechanism to form solid-state nanopores via electron beam induced carbon deposition", Nanotechnology, (2019), DOI:10.1088/1361-6528/ab39a2.
  1. Lukas Jablonka, Pavel Moskovkin, Zhen Zhang, Shi-Li Zhang, Stéphane Lucas and Tomas Kubart, " Metal filling by high power impulse magnetron sputtering", J. Phys. D: Appl. Phys. 52 (2019) 365202
  1. Chenyu Wen, Shiyu Li, Shuangshuang Zeng, Zhen Zhang, Shi-Li Zhang, "Autogenic analyte translocation in nanopores", Nano Energy (2019), DOI: 10.1016/j.nanoen.2019.03.092
  1. Xi Chen, Si Chen, Qitao Hu, Shi-Li Zhang, Paul M Solomon, and Zhen Zhang, 'Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate', ACS Sensors (2019), DOI: 10.1021/acssensors.8b01394
  1. Zhen Zhang, ‘Understanding low-frequency noise in ion-sensitive field-effecttransistor sensors operating in electrolytes’, (Invited talk), IEEE nanotechnology materials and devices conference (NMDC), Oct. 2019, Stockholm, Sweden.
  1. Chenyu Wen, Shuangshuang Zeng, Zhen Zhang, Shili Zhang, ‘Signal and Noise Properties of Translocation Current in Multiple-Nanopore Sensors’, IEEE nanotechnology materials and devices conference (NMDC), Oct. 2019, Stockholm, Sweden.
  1. QitaoHu, Shili Zhang, Si Chen and Zhen Zhang, ‘Symmetric Lateral Bipolar Transistors as Low Noise Signal Amplifier’, IEEE nanotechnology materials and devices conference (NMDC), Oct. 2019, Stockholm, Sweden.
  1. Shiyu Li, Shuangshuang Zeng, Zhen Zhang, Klas Hjort and Shi-Li Zhang, ‘NANOPARTICLE LOCALIZATION ON SOLID-STATE NANOPORES VIA ELECTROPHORETIC FORCE’, Transducers 2019 - EUROSENSORS XXXIII, 23-27 June 2019 - Berlin, Germany.
  1. Xi Chen, Si Chen, Qitao Hu, Shi-Li Zhang, Paul Solomon, and Zhen Zhang, “A novel gate junction design for low noise Si Nanowire ISFET Sensor application”, China Semiconductor Technology International Conference (CSTIC), March 19th, 2019, Shanghai, China. (Invited talk)
  1. Tuan Thien Tran, Lukas Jablonka, Zhen Zhang and Daniel Primetzhofer; ‘Compositional and structural evolution of ultra-thin nickel silicide films as studied by in-situ low- and medium-energy-ion-scattering’; Material Research Society Spring Meeting, 22-26 April 2019, Pheonix, Arizona, USA.

2018

  1. Malkolm Hinnemo, Asta Makaraviciute, Patrik Ahlberg, Jörgen Olsson, Zhen Zhang, Shi-Li Zhang, and Zhibin Zhang, ‘Protein sensing beyond the Debye Length Using Graphene Field-effect Transistors’, IEEE Sensors Journal, VOL. 18, NO. 16, pp.6497-6503 (2018).
  1. L. Jablonka, T. Kubart, F. Gustavsson, M. Descoins, D. Mangelinck, S.-L. Zhang, and Z. Zhang, "Improving the morphological stability of nickel germanide by tantalum and tungsten additions", Appl. Phys. Lett., 112, 103102 (2018).
  1. L. Jablonka, L. Riekehr, Z. Zhang, S.-L. Zhang, and T. Kubart, "Highly conductive ultrathin Co films by high-power impulse magnetron sputtering", Appl. Phys. Lett., 112, 043103 (2018).
  1. Xingxing Xu, Asta Makaraviciutea, Jean Pettersson, Shi-Li Zhang, Leif Nyholm, and Zhen Zhang, ‘Revisiting the Factors Influencing Gold Electrodes Prepared Using Cyclic Voltammetry’, Sensors and Actuators B: Chemical (2018), DOI: 10.1016/j.snb.2018.12.008
  1. Chenyu Wen, S. Zeng, Zhen Zhang and Shi-Li Zhang, "Group behavior of nanoparticles translocating multiple nanopores", Anal. Chem., (2018) DOI: 10.1021/acs.analchem.8b03408 .
  1. S. Li, S. Zeng, L. Chen, Z. Zhang, K. Hjort, and S.-L. Zhang, “Nanoarrays on Passivated Aluminum Surface for Site-Specific Immobilization of Biomolecules,” ACS Applied Bio Materials, Jun. 2018, DOI: 10.1021/acsabm.8b00037 .
  1. Jiyue Wu, Amit Mahajan, Lars Riekehr, Hangfeng Zhang, Bin Yang, Nan Meng, Zhen Zhang (corresponding author) and Haixue Yan, Perovskite Srx(Bi1-xNa0.97-xLi0.03)0.5TiO3 ceramics with polar nano regions for high power energy storage, Nano Energy, DOI: 10.1016/j.nanoen.2018.06.016 .
  1. X. Chen, Q. Hu, S. Chen, N.L. Netzer, Z. Wang, S.-L. Zhang, and Z. Zhang, “Multiplexed Analysis of Molecular and Elemental Ions Using Nanowire Transistor Sensors”, Sensors and Actuators B: Chemical 270, 89 (2018).
  1. Tomas Kubart, Lukas Jablonka, Zhen Zhang, Shi-Li Zhang, ’ Highly conductive ultrathin Co films by high-power impulse magnetron sputtering‘, 16th International Conference on Plasma Surface Engineering, September 17 - 21, 2018, Garmisch-Partenkirchen, Germany.
  1. Shuangshuang Zeng, Chenyu Wen, Shi-Li Zhang, Zhen Zhang, ‘Single molecule detection via solid state carbon nanopore’, 9th Euro Biosensors & Bioelectronics Congress, November 29-30, 2018 at Dublin, Ireland
  1. Qitao Hu, Xi Chen, Hans Norström, Shuangshuang Zeng, Yifei Liu, Fredrik Gustavsson, Shi-Li Zhang, Si Chen, and Zhen Zhang, ‘Current gain and low-frequency noise of symmetric lateral bipolar junction transistors on SOI’, 48th European Solid-State Device Research Conference (ESSDERC), September 3 - 6, 2018, DRESDEN, Germany
  1. Xingxing Xu, Asta Makaraviciute, Jean Pettersson, Shili Zhang, Leif Nyholm, Zhen Zhang, "Considerations in the Cyclic Voltammetry of Gold in Sulfuric Acid Solutions and its Relation to the Experimental Configuration", 69th Annual Meeting of the International Society of Electrochemistry, September 2nd to 7, Bologna, Italy
  1. Da Zhang, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘Low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface of ion sensors’ China Semiconductor Technology International Conference (CSTIC), March 12th, 2018, Shanghai, China. (Invited talk)

2017

  1. Chenyu Wen, Zhen Zhang , Shi-Li Zhang, Physical Model for Rapid and Accurate Determination of Nanopore Size via Conductance Measurement, ACS Sensors, 2, 1523 (2017), DOI: 10.1021/acssensors.7b00576
  1. Asta Makaraviciute, Xingxing Xu, Leif Nyholm, and Zhen Zhang, ‘Systematic Approach to the Development of Microfabricated Biosensors: Relationship between Gold Surface Pretreatment and Thiolated Molecule Binding’ ACS Applied Materials and Interfaces (2017) DOI: 10.1021/acsami.7b08581.
  1. Da Zhang, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘Correlation of Low-Frequency Noise to the Dynamic Properties of the Sensing Surface in Electrolytes’ ACS Sensors (2017) DOI:10.1021/acssensors.7b00285
  1. Da Zhang, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, ‘An impedance model for the low-frequency noise originating from the dynamic hydrogen ion reactivity at the solid/liquid interface’, Sensors and Actuators B: Chemical (2017) DOI:10.1016/j.snb.2017.07.054.
  1. Nathan L. Netzer, Indrek Must, Yupu Qiao, Shi-Li Zhang, Zhenqiang Wang, and Zhen Zhang, “Biomimetic supercontainers for size-selective electrochemical sensing of molecular ions”, Nature: scientific reports | 7:45786 (2017) | DOI: 10.1038/srep45786
  1. Chenyu Wen, Shuangshuang Zeng, Kai Arstila, Timo Sajavaara, Yu Zhu, Zhen Zhang, and Shi-Li Zhang, ‘Generalized Noise Study of Solid-State Nanopores at Low 2 Frequencies’, ACS Sensors, ACS Sensors 2, 300 (2017).
  1. L. Jablonka, T. Kubart, D. Primetzhofer, A. Abedin, P.-E. Hellström, M. Östling, J. Jordan-Sweet, C. Lavoie, S.-L. Zhang, and Z. Zhang, “Formation of nickel germanides with Ni layers below 10 nm in thickness”, J. Vac. Sci. Technol. B, 35, 020602-1 (2017)
  1. A. Makaraviciute, X. Xu, S.L. Zhang, L. Nyholm, Z. Zhang, ‘Impact of different pre-treatment methods on the cleanliness and functionalization of microfabricated gold surfaces aimed at biosensor applications’, 5th International Conference on Bio-Sensing Technology, Riva del Garda (on Lake Garda), Italy, May 2017
  1. Xi Chen, Qitao Hu, Si Chen, Nathan L. Netzer, Zhenqiang Wang, Shi-Li Zhang, and Zhen Zhang, ‘Multi-target detections using a silicon nanowire ISFET array’ , 5th International Conference on Bio-Sensing Technology, Riva del Garda (on Lake Garda), Italy, May 2017

2016

  1. Da Zhang, Indrek Must, Nathan L. Netzer, Xingxing Xu, Paul Solomon, Shi-Li Zhang, and Zhen Zhang, “Direct assessment of solid–liquid interface noise in ion sensing using a differential method”, Appl. Phys. Lett., 108, 151603 (2016)
  1. Xi Chen, Tao Zhang, Vassilios Constantoudis, Shi-Li Zhang, and Zhen Zhang, “Aged Hydrogen Silsesquioxane for Sub-10 nm Line Patterns”, Microelectron. Eng., 163, 105 (2016)
  1. Chenyu Wen, Shuangshuang Zeng, Zhen Zhang, Klas Hjort, Ralph Scheicher and Shi-Li Zhang, “On nanopore DNA sequencing by signal and noise analysis of ionic current”, Nanotechnology, 27 (2016) 215502.
  1. T. Kubart, L. Jablonka, Z. Zhang, S.L. Zhang, "Electrical conductivity of thin cobalt films deposited by HiPIMS", Fifteenth International Conference on Reactive Sputter Deposition 2016, Ghent, Belgium, Dec 2016.
  1. Lukas Jablonka, Ahmad Abedin, Per-Erik Hellström, Mikael Östling, Shi-Li Zhang, Zhen Zhang, Jean L. Jordan Sweet, Christian Lavoie, "Scalability study of nickel germanides", Materials for Advanced Metalization conference, Brussels, Belgium, March 2016.

2015

  1. Qing Cao, Shu-Jen Han, Jerry Tersoff, Aaron D. Franklin, Yu Zhu, Zhen Zhang, George S. Tulevski, Jianshi Tang, and Wilfried Haensch, “End-Bonded Mo2C Contacts for Carbon Nanotube Transistors with Low, Size-Independent Resistance”, Science, Vol 350, Issue 6256, pp.68-72 (2015).
  1. T. Kubart, L. Jablonka, Z. Zhang, S.L. Zhang, "Metallization of nanostructures by High Power Impulse Magnetron Sputtering" MIATEC 2015 (4th Magnetron, Ion processing & Arc Technologies European Conference), Paris, France, December 11-15 2015.
  1. Zhen Zhang, “Ion sensing using An Ion-gated Bipolar Amplifier”, China Semiconductor Technology International Conference (CSTIC), March 15th, 2015, Shanghai, China. (Invited talk)

Before 2015

Articles in international scientic journals

IEEE Journals

  1. Fei Liu, Zhen Zhang, Marwan H. Khater, Yu Zhu, Siyuranga O. Koswatta, Josephine Chang, Jemima Gonsalves, William Price, Sebastian U. Engelmann, Michael A. Guillorn, “Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy”, IEEE Electron Device Letters, 35, pp. 512-514 (2014).
  1. Zhen Zhang, S. Koswatt, S. Bedell, A. Baraskar, M. Guillorn, S. Engelmann, Y. Zhu, J. Gonsalves, A. Pyzyna, M. Hopstaken, C. Witt, L. Yang, F. Liu, J. Newbury, Wei Song, C. Cabral, M. Lofaro, A. Ozcan, M. Raymond, C. Lavoie, J. Sleight, K. Rodbell, P. Solomon, “Ultra low contact resistivities for CMOS beyond 10nm node”, IEEE Electron Device Letters. 34, pp.723-725 (2013)
  1. Zhen Zhang, J. Atkin, M. Hopstaken, M. Hatzistergos, P. Ronsheim, E. Liniger, R. Laibowitz, P. Solomon, “Probing the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission”, IEEE transaction on Electron Devices, 59, 2027 (2012).
  1. Z. Zhang, F. Pagette, C. D'Emic, B. Yang, C. Lavoie, A. Ray, Y. Zhu, M. Hopstaken, S. Maurer, C. Murray, M. Guillorn, D. Klaus, J. Bucchignano, J. Bruley, J. Ott, A. Pyzyna, J. Newbury,W. Song, G. Zuo, K.-L. Lee, A. Ozcan, J. Silverman, Q. Ouyang, D-G. Park, W. Haensch, P. M. Solomon, “Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering with Silicides as Diffusion Sources”, IEEE Electron Device Letters, 31, pp. 731-733 (2010)
  1. M. Khater, Z. Zhang (Contact author), J. Cai, C. Lavoie, C. d‘Emic, B. Yang†, Q. Yang, M. Guillorn, D. Klaus, J. Ott, Y. Zhu, Y. Zhang, C. Choi, M. Frank, K-L. Lee, V. Narayanan, D.-G. Park, Q. Ouyang, and W. Haensch, “High-κ/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length”, IEEE Electron Device Letters, 31, pp. 275-277 (2010).
  1. Z. Zhang, J. Lu, Z. Qiu, P.-E. Hellström, M. Östling, and S.-L. Zhang, “Performance fluctuation of FinFETs with Schottky barrier source/drain”, IEEE Electron Device Letters, 29, 506 (2008).
  1. Z. Zhang, Z. Qiu, P.-E. Hellström, G. Malm, J. Olsson, J. Lu, M. Östling, and S.-L. Zhang, “SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation”, IEEE Electron Device Letters, 29, 125(2008)
  1. Z. Qiu, Z. Zhang, M. Östling, and S.-L. Zhang, “A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering”, IEEE Transactions on Electron Devices, 55, 396(2008) (Contact author)
  1. Z. Zhang, Z. Qiu, R. Liu, M. Östling, and S.-L. Zhang, “Schottky barrier height tuning by means of ion implantation into pre-formed silicide films followed by drive-in anneal”, IEEE Electron Device Letters, 28, 565 (2007).

AIP Journals

  1. Da Zhang, Xindong Gao, Si Chen, Hans Norström, Ulf Smith, Paul Solomon, Shi-Li Zhang, Zhen Zhang, “An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance”, Appl. Phys. Lett., 105, 082102 (2014)
  1. Zhen Zhang, Bin Yang, Yu Zhu, Simon Gaudet, Steve Rossnagel, Andrew J. Kellock, Ahmet Ozcan, Conal Murray, Patrick Desjardins, Shi-Li Zhang, Jean Jordan-Sweet, and Christian Lavoie “Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films” Appl. Phys. Lett., 97, 252108 (2010)
  1. Zhen Zhang, Shi-Li Zhang, Bin Yang, Yu Zhu, Stephen M. Rossnagel, Simon Gaudet, Andrew J. Kellock, Jean Jordan-Sweet, and Christian Lavoie, “Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1-xPtx on Si substrate”, Appl. Phys. Lett., 96, 071915 (2010)
  1. Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Åkerman, Mikael Östling, Lars Hultman, and Shi-Li Zhang, “Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films”, Appl. Phys. Lett., 96, 031911 (2010)
  1. Conal E. Murray, Zhen Zhang, Christian Lavoie and Jean L. Jordan-Sweet, “Stress determination in nickel monosilicide films using x-ray diffraction”, J. Appl. Phys., 106, 073521 (2009)
  1. Z. Zhang, S.-L. Zhang, M. Östling, and J. Lu, “Robust, scalable self-aligned platinum silicide process”, Appl. Phys. Lett., 88, 142114 (2006).
  1. Z. Zhang, J. Lu, P.-E. Hellström, M. Östling, and S.-L. Zhang, “Ni2Si nanowires of extraordinarily low resistivity”, Appl. Phys. Lett., 88, 213103 (2006).
  1. Z. Zhang, P.-E. Hellström, M. Östling, S.-L. Zhang, and J. Lu, “Electrically robust ultralong nanowires of NiSi, Ni2Si and Ni31Si12”, Appl. Phys. Lett., 88, 043104 (2006).

Other journals

  1. Xindong Gao, Joakim Andersson, Tomas Kubart, Tomas Nyberg, Ulf Smith, Jun Lu, Lars Hultman, Andrew J. Kellock, Zhen Zhang, Christian Lavoie, and Shi-Li Zhang, “Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness”, Electrochemical and Solid-State Letters, 14, H268-H270 (2011)
  1. Jun Luo, Zhijun Qiu, Zhen Zhang, Mikael Ostling, Shi-Li Zhang, “Interaction of NiSi with dopants for metallic source/drain applications”, J. Vac. Sci. Technol. B, 28, 1071 (2010).
  1. J. Hållstedt, P.-E. Hellström, Z. Zhang(Equal contribution as the 1st author), G. Malm, J. Edholm, J. Lu, S.-L. Zhang, H. H. Radamson, and M. Östling, “A robust spacer gate process for deca-nanometer high-frequency MOSFETs”, Microelectron. Eng., 83, 434 (2006).
  1. Z. Zhang, P.-E. Hellström, J. Lu, M. Östling, and S.-L. Zhang, “A novel, self-aligned process for platinum silicide nanowires”, Microelectron. Eng., 83, 2107 (2006).
  1. Haixue Yan; Hongtao Zhang; Zhen Zhang; Ubic, R, Reece, M.J., “B-site donor and acceptor doped Aurivillius phase Bi3NbTiO9 ceramics”, Journal of the European Ceramic Society, 26, 2785 (2006).
  1. Haixue Yan; Hongtao Zhang ; Ubic Rick ; Reece Michael J.; Jing Liu; Zhijian Shen; Zhen Zhang, “A lead-free high-curie-point ferroelectric ceramic, CaBi2Nb2O9”, Advanced Materials, 17, 1261 (2005).
  1. Haixue Yan, Zhen Zhang; Weimin Zhu; Lianxin He; Youhua Yu; Chengen Li; Jiaguang Zhou, “The effect of (Li,Ce) and (K,Ce) doping in Aurivillius phase material CaBi4Ti4O15”, Materials Research Bulletin, 39, 1237 (2004).
  1. Zhen Zhang, Haixue Yan; Pinghua Xiang; Xianlin Dong; Yongling Wang, “Grain orientation effects on the properties of a bismuth layer-structured ferroelectric (BLSF) Bi3NbTiO9 solid solution”, Journal of the American Ceramic Society, 87, 602 (2004).
  1. Zhen Zhang, Haixue Yan; Xianlin Dong; Yongling Wang, “Preparation and electrical properties of bismuth layer-structured ceramic Bi3NbTiO9 solid solution” Materials Research Bulletin, 38, 241 (2003).

Contributions to scientific conferences

  1. Zhen Zhang, “Advanced contact technology for extremely scaled device applications”, China Semiconductor Technology International Conference (CSTIC), March 16-17th, 2014, Shanghai, China. (Invited talk)
  1. Zhen Zhang, “Schottky barrier engineering”, ULIS conference, April 7-9th, 2014, Stockholm, Sweden. (Invited talk)
  1. Zhen Zhang, “Advanced contact technology: from material properties to device applications”, 16th Euro. Workshop on Materials for Advanced Metallization, Grenoble, March 2012. (Invited talk)
  1. Fei Liu, Benjamin Fletcher, Eric Joseph, Yu Zhu, Jemima Gonsalves, William Price, Gregory M. Fritz, Sebastian U. Engelmann, Adam Pyzyna, Zhen Zhang, Cyril Cabral, Jr, Michael A Guillorn, “Subtractive W Contact and Local Interconnect Co-integration (CLIC)”, IEEE International interconnect technology conference, Kyoto, Japan, June-2013.
  1. Gregory Fritz*, Adam Pyzyna, Zhen Zhang, Fei Liu, Michael Guillorn, Kenneth Rodbell, Robert Wisnieff, “Interconnect Material Choices for Future Scaled Devices”, Advanced Metallization Conference, Albany, NY, 2012
  1. Mark Raymond, Bin Yang, Zhen Zhang, Ahmet Ozcan and Christian Lavoie, “Silicide Contact Resistivity and Phase Formation for Extremely Scaled CMOS Device Applications”, Materials Research Society (MRS) 2012 Spring meeting, San Francisco.
  1. K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, B. Haran, A. Kumar, T. Adam, A. Reznicek, N. Loubet, H. He, J. Kuss, M. Wang, T. M. Levin, F. Monsieur, Q. Liu, R. Sreenivasan, J. Cai, A. Kimball, S. Mehta, S. Luning, Y. Zhu, Z. Zhu, T. Yamamoto, A. Bryant, C. –H. Lin, S. Naczas, H. Jagannathan, L. F. Edge, S. Allegret-Maret, A. Dube, S. Kanakasabapathy, S. Schmitz, A. Inada, S. Seo, M. Raymond, Z. Zhang, A. Yagishita, J. Demarest, J. Li, M. Hopstaken, N. Berliner, A. Upham, R. Johnson, S. Holmes, T. Standaert, M. Smalley, N. Zamdmer, Z. Ren, T. Wu, H. Bu, V. Paruchuri, D. Sadana, V. Narayanan, W. Haensch, J. O'Neill, T. Hook, M. Khare, B. Doris, “ETSOI CMOS for System-on-Chip Applications Featuring 22nm Gate Length, Sub-100nm Gate Pitch, and 0.08µm2 RAM Cell”, IEEE VLSI Symposium 2011, pp. 128-129.
  1. M.A. Guillorn, J. Chang, A. Pyzyna, S. Engelmann, M. Glodde, E. Joseph, R. Bruce, J.A. Ott, A. Majumdar, F. Liu, M. Brink, S. Bangsaruntip, M. Khater, S. Mauer, I. Lauer, E.A. Duch, C. Lavoie, Z. Zhang, J. Newbury, E. Kratschmer, D.P. Klaus, J. Bucchignano, B. To, W. Graham, E. Sikorski, V. Narayanan, N. Fuller and W. Haensch, “A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch”, IEEE VLSI Symposium 2011, pp. 64-65. (Late news paper)
  1. Zhen Zhang, F. Pagette, C. D'Emic, B. Yang, C. Lavoie, A. Ray, Y. Zhu, M. Hopstaken, S. Maurer, C. Murray, M. Guillorn, D. Klaus, J. J. Bucchignano, J. Bruley, J. Ott, A. Pyzyna, J. Newbury,W. Song, G. Zuo, K.-L. Lee, A. Ozcan, J. Silverman, Q. Ouyang, D-G. Park, W. Haensch, P. M. Solomon, “Effective Schottky Barrier Lowering for Contact Resistivity Reduction Using Silicides as Diffusion Sources”, Proc. International Symposium on VLSI Technology, System and Applications (VLSI-TSA) 2010.
  1. Bin Yang, Yu Zhu, Zhen Zhang, Mark Raymond, Jean Jordan-Sweet, Christian Lavoie, Shankar_Muthukrishnan, Abhilash Mayur, Ben NG, Simon Gaude, “(Ni,Pt)Si morphological study with post-silicide laser annealing”, Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009,
  1. Bin Yang, Zhen Zhang, Simon Gaudet, Ahmet S Ozcan, Jean Jordan-Sweet, Andrew Kellock, Patrick Desjardins, and Christian Lavoie, “(Ni, Pt)Si Formation, Texture, and Morphological Stability with High Pt Alloy Concentration” Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009.
  1. Zhen Zhang, Bin Yang, Simon Gaudet, Steve Rossnagel, Andrew J. Kellock, Yu Zhu, Ahmet Ozcan, Conal Murray, Patrick Desjardins, Jean Jordan-Sweet, Christian Lavoie, “Ultra-thin Ni-based silicides formed from Metal-Si intermixed layer”, Materials Research Society (MRS) 2009 Fall meeting, Boston, Dec. 2nd, 2009.
  1. M. Östling, V. Gudmundsson, P-E. Hellström, B.G. Malm, Z. Zhang, S.-L. Zhang, “Towards Schottky barrier source/drian MOSFETs”, Invited talk at 9th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2008), eds. R. Huang, 2008, pp. 146-149.
  1. Z.J. Qiu, Z. Zhang, J. Olsson, J. Lu, P.-E. Hellström, R. Liu, M. Östling, S.-L. Zhang, “Role of Si implantation in control of underlap length in Schottky-barrier source/drain MOSFETs on ultrathin body SOI”, Proc. ULIS 2008, pp. 175-178.
  1. Z.J. Qiu, Z. Zhang, J. Lu, R. Liu, M. Östling, S.-L. Zhang, “Silicide as diffusion source for dopant segregation in 70-nm MOSFETs with PtSi Schottky-barrier source/drain on ultrathin-body SOI”, Proc. ULIS 2008, pp. 23-26.
  1. Mikael Östling, B. Gunnar Malm, Martin von Haartman, Julius Hållstedt, Zhen Zhang, Per-Erik Hellström and Shili Zhang, “Challenges for 10 nm MOSFET process integration”, Invited talk at 7th IEEE symposium D&Y Advance Silicon Devices and Technology for ULSI Era, published in Journal of Telecommunications and Information Technology, V.2, 25(2007)

Book chapters

  1. Shi-Li Zhang and Zhen Zhang, “Metal Silicides in Advanced CMOS Technology” Chapter 7 for book “Metallic films: structure, processing and properties” edited by Katayun Barmak (Carnegie Mellon University) and Kevin Coffey (University of Central Florida), Woodhead Publishing Ltd, UK, December-2013

Filed/Issued Patents

(Listed with IBM patent docket number)

  1. YOR920090602US1: SOI SCHOTTKY SOURCE/DRAIN DEVICE STRUCTURE TO CONTROL ENCROACHMENT AND DELAMINATION OF SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 03/18/2010, and issued on 07/09/2013 with number US 8482084)
  1. YOR920110222US1: SILICIDE MICROMECHANICAL DEVICE AND METHODS TO FABRICATE SAME, M. Guillorn, E. Joseph, F. Liu, and Z. Zhang (filed in US on 06/20/2011, filed in PCT with a docket number of YOR920110222US1, and issued on 06/25/2013 with number US 8470628)
  1. FIS920100142US1: METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE, C. Lavoie, A. Ozcan, B. Yang, and Z. Zhang(filed in US on 01/14/2011，and issued on 06/04/2013 with number US 8456011)
  1. YOR920100265US1: SCHOTTKY FET FABRICATED WITH GATE LAST PROCESS, J. Cai, D. Guo, M. Khater, C. Lavoie and Z. Zhang (filed in US on 07/12/2010 and issued on 04/16/2013 with number US 8420469)
  1. YOR920090456US1: USE EPITAXIAL NI SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 04/23/2010 and issued on 04/09/2013 with number US 8415748)
  1. YOR920100069US1: SILICIDE CONTACT FORMATION, A. Kellock, C. Lavoie, A. Ozcan, S. Rossnagel, B. Yang, Y. Zhu, S. Zollner, and Z. Zhang (filed in US on 04/06/2010 and issued on 03/26/2013 with number US 8404589)
  1. FIS920100106US1: SEMICONDUCTOR DEVICE WITH REDUCED JUNCTION LEAKAGE AND AN ASSOCIATED METHOD OF FORMING SUCH A SEMICONDUCTOR DEVICE, M. CAI, C. Lavoie, A. S. OZCAN, B.Yang, and Z. Zhang (filed in US on 10/26/2010 and issued on 01/08/2013 with number US 8349716)
  1. YOR920100030US1: PREVENTION OF OXYGEN ABSORPTION INTO HIGH-K GATE DIELECTRIC OF SILICON-ON-INSULATOR BASED FINFET DEVICES, D. Guo, U. Kwon, C. Yeh, and Z. Zhang (filed in US on 03/04/2010 and issued on 10/09/2012 with number US 8283217)
  1. FIS920100071US1: METHOD FOR FORMING A PROTECTION LAYER OVER SILICIDE CONTACT AND STRUCTURE FORMED THEREON, C. Lavoie, A. S. Ozcan, B. Yang, and Z. Zhang (filed in US on 08/03/2010 and issued on 10/04/2011 with number US8030154)
  1. YOR920100428US1: METAL-SEMICONDUCTOR INTERMIXED REGIONS, C. Lavoie, T. Ning, A. Ozcan, B. Yang, and Z. Zhang (filed in US on 01/24/2011, and issued on 10/02/2012 with number US 8278200)
  1. YOR920090454US1: METHOD FOR FORMING AN SOI SCHOTTKY SOURCE/DRAIN DEVICE TO CONTROL ENCROACHMENT AND DELAMINATION OF SILICIDE, M. H. Khater, C. Lavoie, B. Yang, and Z. Zhang (filed in US on 03/18/2010 and issued on 05/01/2012 with number US8168503)
  1. YOR920090502US1: SOURCE/DRAIN TECHNOLOGY FOR THE CARBON NANO-TUBE/GRAPHENE CMOS WITH A SINGLE SELF-ALIGNED METAL SILICIDE PROCESS, J. Chang, C. Lavoie, and Z. Zhang (filed in US on 04/19/2010 and issued on 08/14/2012 with number US 8242485)
  1. YOR920100273US1: A METHOD TO ENABLE THE PROCESS AND ENLARGE THE PROCESS WINDOW FOR THE SILICIDAITION OF SUSPENDED SI STRUCTURES WITH EXTREMELY SMALL DIMENSION, B. Fletcher, C. Lavoie, S. Maurer, and Z. Zhang (filed in US on 02/07/2011, filed in PCT on 02/02/2012，and issued on 08/21/2012 with number US 8247319 )
  1. 1930300-7: Si based nanoscale chamber for single or multiple molecule analysis, Shuangshuang Zeng, Zhen Zhang, filed in Sweden on 10/10/2019
  1. 1830248-9: Suspended Si nanowire array based electronic ears for rapid drug susceptibility tests, Qitao Hu, Si Chen, Shili Zhang, Zhen Zhang, filed in Sweden on 08/27/2018
  1. US 62/368,821: Devices, Systems and Methods for Use of Electrical Ion Sensors Based on Metal-Organic Supercontainers, Nathan L. Netzer, Indrek Must, Yupu Qiao, Shi-Li Zhang, Zhenqiang Wang, and Zhen Zhang, filed in US on 07/29/2016
  1. YOR920150906US1: INTEGRATED CIRCUIT HAVING MIM CAPACITOR WITH REFRACTORY METAL SILICIDED STRAP AND METHOD TO FABRICATE SAME, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 02/16/2015)
  1. YOR920130990US1: SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION, K. Cheng, R. H. Dennard; Z. Zhang (filed in US on 10/12/2015)
  1. YOR920150345US1: Trigate Device with Full Silicided Epi-less Source/Drain for High Density Access Transistor Applications, M. A. Guillorn, F. Liu, and Z. Zhang (filed in US on 08/05/2015)
  1. YOR920150170US1: HIGH DENSITY NANO-ARRAY FOR SENSING, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 05/28/2015)
  1. YOR920150093US1: SELF-ALIGNED VERTICAL CNT ARRAY TRANSISTOR, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 03/27/2015)
  1. YOR920110697US2: TECHNIQUES TO FORM UNIFORM AND STABLE SILICIDE, C. Lavoie, D. Lee, A. Ozcan, and Z. Zhang(filed in US on 01/28/2015)
  1. YOR920140085US1: MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE INVERSION, Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 10/27/2014)
  1. YOR920130321US1: JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS, Q. Cao, Z. Li, F. Liu, and Z. Zhang (filed in US on 07/12/2013)
  1. YOR920121020US1: REPLACEMENT GATE SELF-ALIGNED CARBON NANOSTRUCTURE TRANSISTOR, with Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 06/04/2013)
  1. YOR920130105US1: TECHNIQUES FOR FABRICATING JANUS SENSOR, with Q. Cao, K. Cheng, Z. Li, F. Liu, and Z. Zhang (filed in US on 05/02/2013)
  1. YOR920130184US1: COLORIMETRIC RADIATION DOSIMETRY BASED ON FUNCTIONAL POLYMER AND GOLD NANOPARTICLE HYBRID, with Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 04/23/2013)
  1. YOR820121027: DUAL SILICIDE PROCESS COMPATIBLE WITH A REPLACEMENT-METAL-GATE. E. Alptekin, S. Koswatta, C. Lavoie, A.S. Ozcan, K. T Schonenberg, P. M. Solomon and Z. Zhang (filed in US on 04/11/2012)
  1. YOR920120680US1, FACETED SEMICONDUCTOR NANOWIRE, K. Cheng, J. Li, Y. Zhu and Z. Zhang (filed in US on 03/14/2013)
  1. FIS920120290US1: CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION, Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 03/14/2013)
  1. YOR920120946US1: A NOVEL DUAL SILICIDE PROCESS, C. Cabral, C. Lavoie, A. S. Ozcan and Z. Zhang (filed in US on 01/31/2013)
  1. YOR920120842US1, REDUCING CONTACT RESISTANCE BY DIRECTED SELF-ASSEMBLING, Q. Cao, K. Cheng, Z. Li, F. Liu and Z. Zhang (filed in US on 01/18/2013)
  1. YOR920120287US1: SELF-ALIGNED SILICIDE BOTTOM PLATE FOR EDRAM APPLICATIONS BY SELF-DIFFUSING METAL IN CVD/ALD METAL PROCESS, Q. Cao, S. Fang, Z. Li, F. Liu and Z. Zhang (filed in US on 10/31/2012)
  1. YOR920120606US1, USING FAST ANNEAL TO FORM UNIFORM NI(PT)SI(GE) CONTACTS ON SIGE LAYER, J. Newbury, K. Rodbell, Y. Zhu and Z. Zhang (filed in US on 8/24/2012)
  1. FIS920120095US1: NIOBIUM THIN FILM STRESS RELIEVING LAYER FOR THIN-FILM SOLAR CELLS, Q. Cao, Z. Li, F. Liu and Z. Zhang (filed in US on 06/27/2012)
  1. YOR920110525US1: INTERFACE ENGINEERING TO OPTIMIZE METAL-III-V CONTACTS, C. Lavoie, U. Rana, K. Shiu, Y. Sun, D.K. Sadana, P. M. Solomon and Z. Zhang (filed in US on 02/08/2012)
  1. YOR920110455US1: USE BAND-EDGE GATE METALS AS THE CONTACTS TO THE SOURCE AND DRAIN OF CMOS DEVICES, K. Choi, C. Lavoie, P.M. Solomon, B. Yang and Z. Zhang (Filed in US on 03/15/2012)
  1. YOR920110697US1: STRUCTURE AND METHOD TO FORM UNIFORM AND STABLE SILICIDE, D. Lee, C. Lavoie, A. S. Ozcan and Z. Zhang (Filed in US on 02/08/2012)
  1. YOR920100681US1: METHOD TO FABRICATE MULTICRYSTAL SOLAR CELL WITH LIGHT TRAPPING SURFACE USING NANOPORE COPOLYMER, D. Guo, Z. Li, K. Wang and Z. Zhang (filed in US on 11/04/2012)
  1. YOR920090453US1: MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION, W. Haensch, C. Lavoie, Q. Ouyang, X. Shao, P.M. Solomon, B. Yang and Z. Zhang (filed in US on 11/29/2010),
  1. YOR920100053US1: SCHOTTKY BARRIER SOLAR CELLS WITH HIGH AND LOW WORK FUNCTION METAL CONTACTS, J. Desouza, H. Hovel, D. Inns, J. Kim, C. Lavoie, C. Murray, D. Sadana, K. Saenger, G. Shahidi and Z. Zhang (filed in US on 05/09/2011)
  1. YOR920100052US1: SOLAR CELL WITH INTERDIGITATED BACK CONTACTS FORMED FROM HIGH AND LOW WORK-FUNCTION-TUNED SILICIDES OF THE SAME METAL, J. Desouza, H. Hovel, D. Inns, J. Kim, C. Lavoie, D. Sadana, K. Saenger, and Z. Zhang (filed in US on 05/09/2011)
  1. YOR920090600US1: A SCHOTTKY JUNCTION SI NANOWIRE/NANOBELT FIELD-EFFECT BIO-SENSOR/MOLECULE DETECTOR, D. Guo, C. Lavoie, Q. Ouyang, Y. Sun and Z. Zhang (filed in US on 06/29/2010)
  1. YOR920100067US1, SCHOTTKY JUNCTION SOURCE/DRAIN FET FABRICATION USING SULFUR OR FLOURINE CO-IMPLANTATION, C. Lavoie, S. Maurer, Q. Ouyang, P. M. Solomon, and Z. Zhang (filed in US on 04/05/2010, Abandoned on 02/03/2012)
  1. YOR920100068US1: FET WITH FUSI GATE AND REDUCED SOURCE/DRAIN CONTACT RESISTANCE, C. Lavoie, T. Ning, Q. Ouyang, P. M. Solomon and Z. Zhang (filed in US on 04/06/2010)
  1. YOR920100069US1: SILICIDE CONTACT FORMATION, A. Kellock, C. Lavoie, A. Ozcan, S. Rossnagel, B. Yang, Y. Zhu, S. Zollner and Z. Zhang (filed in US on 04/06/2010)
  1. YOR920110511US1: A METHOD TO FORM SILICIDE CONTACT IN TRENCHES, M. A. Guillorn, C. Lavoie, G. Shahidi, B. Yang, and Z. Zhang (filed in US on 01/23/2012)
  1. YOR920100071US1: SCHOTTKY FET WITH ALL METAL GATE, D. Guo, M. Khater, C. Lavoie, Q. Ouyang and Z. Zhang (filed in US on 04/07/2010, Abandoned on 7/11/2012)
  1. YOR920100398US1: INTERMIXED SILICIDE FOR REDUCTION OF EXTERNAL RESISTANCE IN INTEGRATED CIRCUIT DEVICES, C. Lavoie, A. Ozcan, B. Yang and Z. Zhang (filed in US on 11/05/2010)
  1. YOR920100245US1: SILICON ON INSULATOR FIELD EFFECT DEVICE, D. Guo and Z. Zhang (filed in US on 08/16/2010)
  1. FIS920100106US1: METHOD TO REDUCE JUNCTION LEAKAGE, M. Cai, C. Lavoie, A. Ozcan, B. Yang and Z. Zhang (filed in US on 10/26/2010)
  1. YOR920100207US1: CONTACT RESISTIVITY REDUCTION BY DEEP LEVEL IMPURITIES, N. Tak and Z. Zhang (filed in US on 06/03/2010, filed in CN with a DOCKET number YOR920100207CN1 on 05/31/2011, and filed in KR with a DOCKET number YOR920100207KR1 on 05/16/2011),
  1. YOR920100257US1: IMPLANTLESS DOPANT SEGREGATION PROCESS FOR SILICIDE CONTACTS, C. Cabral, J. Cotte, D. Koli, L. Kosbar, M. Krishnan, C. Lavoie, S. Rossnagel and Z. Zhang (filed in US on 07/09/2010)
  1. YOR920100430US1: DEPOSITION ON A NANOWIRE USING ATOMIC LAYER DEPOSITION, D. Guo, Z. Li, K. Wang, Y. Zhu and Z. Zhang (filed in US on 01/25/2011)
  1. YOR920100323US1: STABILIZED NICKEL SILICIDE INTERCONNECTS, C. Cabral, B. Fletcher, C. Lavoie and Z. Zhang (filed in US on 08/1/2011)
  1. FIS920110076US1: SELF-ALIGNED BOTTOM PLATE FOR MHK MIM FOR EDRAM APPLICATIONS, P. Chudzik, D. Farmer, Z. Li, C. Pei, K. Wang, J. Yu and Z. Zhang (filed in US on 09/09/2011)